基于藍寶石襯底的三角形單層二硒化鎢

簡要描述：Isolated monolayer thickness WSe2 are grown onto c-cut （0001） sapphire substrates.

產品型號：
廠商性質：生產廠家
更新時間：2024-06-04
訪問量：1057

產品分類

二維材料

其他二維材料二維材料粉末二維材料溶液碲化物晶體硒化物晶體硫化物晶體絕緣體鈣鈦礦異質結 MOFS材料二維材料薄膜黑磷六方氮化硼查看全部產品

詳細介紹

Isolated monolayer thickness WSe2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness WSe2 triangular flakes randomly distributed across sapphire substrate. While some regions reach continuity with coalesced WSe2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer WSe2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	(0001) c-cut sapphire
Coverage	Isolated and partially merged monolayer triangles
Electrical properties	1.62 eV Direct Bandgap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
Production method	Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods	Raman, photoluminescence, TEM, EDS

Specifications

1) Well-separated WSe2 domains across c-cut sapphire

2) One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Atomically smooth surface with roughness < 0.22 nm.

4) Highly uniform surface morphology

5) 99.9995% purity as determined by nano-SIMS measurements

6) Repeatable Raman and photoluminescence response

7) High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) c-cut Sapphire but our research and development team can transfer WSe2 triangles onto variety of substrates including PET, quartz, and SiO2/Si without significant compromising of material quality.

9) Defect profile. WSe2 monolayer triangles do not contain intentional dopants or defects. However, our technical staff can produce defected WSe2 using α-bombardment technique.

Supporting datasets [for 100% Full area coverage on SiO2/Si]

Transmission electron images (TEM) acquired from CVD grown WSe2 (triangular) monolayers on sapphire confirming highly crystalline nature of monolayers

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown WSe2 triangle monolayers on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.62 eV in agreement with the literature.

產品咨詢

留言框

產品：
您的單位：
您的姓名：
聯系電話：
常用郵箱：
省份：
詳細地址：
補充說明：
驗證碼：

請輸入計算結果（填寫阿拉伯數字），如：三加四=7

上一篇：EMFUTER納米鹽/微米鹽
下一篇：基于藍寶石襯底的三角形單層二硫化鎢

基于藍寶石襯底的三角形單層二硒化鎢

留言框

產品：

您的單位：

您的姓名：

聯系電話：

常用郵箱：

省份：

詳細地址：

補充說明：

驗證碼：